Drift mobility of long-living excitons in coupled GaAs quantum wells

We observe high-mobility transport of indirect excitons in coupled GaAs quantum wells. A voltage-tunable in-plane potential gradient is defined for excitons by exploiting the quantum confined Stark effect in combination with a lithographically designed resistive top gate. Excitonic photoluminescence resolved in space, energy, and time provides insight into the in-plane drift dynamics. Across several hundreds of microns an excitonic mobility of >10^5 cm2/eVs is observed for temperatures below 10 K. With increasing temperature the excitonic mobility decreases due to exciton-phonon scattering.Comment: 3 pages, 3 figure

Covalently Binding the Photosystem I to Carbon Nanotubes

We present a chemical route to covalently couple the photosystem I (PS I) to carbon nanotubes (CNTs). Small linker molecules are used to connect the PS I to the CNTs. Hybrid systems, consisting of CNTs and the PS I, promise new photo-induced transport phenomena due to the outstanding optoelectronic properties of the robust cyanobacteria membrane protein PS I

Photoconductance of a submicron oxidized line in surface conductive single crystalline diamond

We report on sub-bandgap optoelectronic phenomena of hydrogen-terminated diamond patterned with a submicron oxidized line. The line acts as an energy barrier for the two-dimensional hole gas located below the hydrogenated diamond surface. A photoconductive gain of the hole conductivity across the barrier is measured for sub-bandgap illumination. The findings are consistent with photogenerated electrons being trapped in defect levels within the barrier. We discuss the spatial and energetic characteristics of the optoelectronic phenomena, as well as possible photocurrent effects

Pinning a Domain Wall in (Ga,Mn)As with Focused Ion Beam Lithography

We utilize a focused beam of Ga+ ions to define magnetization pinning sites in a ferromagnetic epilayer of (Ga,Mn)As. The nonmagnetic defects locally increase the magneto-crystalline anisotropy energies, by which a domain wall is pinned at a given position. We demonstrate techniques for manipulating domain walls at these pinning sites as probed with the giant planar Hall effect (GPHE). By varying the magnetic field angle relative to the crystal axes, an upper limit is placed on the local effective anisotropy energy.Comment: 13 pages, 3 figure

Optical control of internal electric fields in band-gap graded InGaN nanowires

InGaN nanowires are suitable building blocks for many future optoelectronic devices. We show that a linear grading of the indium content along the nanowire axis from GaN to InN introduces an internal electric field evoking a photocurrent. Consistent with quantitative band structure simulations we observe a sign change in the measured photocurrent as a function of photon flux. This negative differential photocurrent opens the path to a new type of nanowire-based photodetector. We demonstrate that the photocurrent response of the nanowires is as fast as 1.5 ps